参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 2.4 V
TechnologySi
Id - Continuous Drain Current5.4 A
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance110 mOhms
Width3.9 mm
Height1.75 mm
Qg - Gate Charge4.7 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
ImageInfineon / IR IRF9335TRPBF
Unit Weight0.019048 oz
Factory Pack Quantity4000
BrandInfineon / IR
Pd - Power Dissipation2.5 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET 1 P-CH -30V HEXFET 59mOhms 4.7nC
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)