参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.5 V
MXHTS85412999
KRHTS8541299000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 40 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingTube
SubcategoryIGBTs
ImageInfineon Technologies IGW50N60TFKSA1
BrandInfineon Technologies
Product TypeIGBT Transistors
ManufacturerInfineon
SeriesTRENCHSTOP IGBT
USHTS8541290095
Unit Weight0.191185 oz
Factory Pack Quantity240
Product CategoryIGBT Transistors
Continuous Collector Current at 25 C90 A
DescriptionIGBT Transistors LOW LOSS IGBT TECH 600V 50A
Part # AliasesIGW50N60T SP000054926
Pd - Power Dissipation333 W
TradenameTRENCHSTOP
Moisture Sensitivity Level1 (Unlimited)