参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Collector- Emitter Voltage VCEO Max600 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.5 V
MXHTS85412999
KRHTS8541299000
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingTube
SubcategoryIGBTs
ImageInfineon Technologies IGW50N60TPXKSA1
BrandInfineon Technologies
Product TypeIGBT Transistors
SeriesTRENCHSTOP IGBT
ManufacturerInfineon
USHTS8541290095
Unit Weight0.213606 oz
Factory Pack Quantity240
Product CategoryIGBT Transistors
DescriptionIGBT Transistors INDUSTRY 14
Continuous Collector Current at 25 C90 A
Part # AliasesIGW50N60TP SP001379668
Pd - Power Dissipation333 W
TradenameTRENCHSTOP
Moisture Sensitivity LevelNot Applicable