参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current7.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
ManufacturerSTMicroelectronics
KRHTS8541299000
Typical Turn-On Delay Time8.8 ns
PackagingTube
Factory Pack Quantity1000
BrandSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32.5 ns
Package / CaseTO-220-3
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541290000
RoHS Details
Product TypeMOSFET
Mounting StyleThrough Hole
ImageSTMicroelectronics STP10N60M2
Qg - Gate Charge13.5 nC
DescriptionMOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
MXHTS85412999
Product CategoryMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.011640 oz
Fall Time13.2 ns
CNHTS8541210000
Pd - Power Dissipation85 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)