参数项参数值
参数项参数值
Forward Transconductance - Min118 S
ConfigurationSingle
Width3.3 mm
Vgs th - Gate-Source Threshold Voltage1.1 V
TechnologySi
Id - Continuous Drain Current182 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4 ns
Height1 mm
Length3.3 mm
Rds On - Drain-Source Resistance2.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Package / CaseVSON-CLIP-8
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
Qg - Gate Charge23 nC
ManufacturerTexas Instruments
RoHS Details
BrandTexas Instruments
ImageTexas Instruments CSD17575Q3
Factory Pack Quantity2500
SubcategoryMOSFETs
SeriesCSD17575Q3
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 30V, N-channel NexFET Pwr MOSFET
Channel ModeEnhancement
Fall Time3 ns
Unit Weight0.001570 oz
Pd - Power Dissipation108 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)