参数项参数值
参数项参数值
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Power - Max-
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.7A
Input Capacitance (Ciss) (Max) @ Vds75pF @ 50V
Rds On (Max) @ Id, Vgs70mOhm @ 2A, 5V
Gate Charge (Qg) (Max) @ Vgs0.73nC @ 5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 600µA
Supplier Device PackageDie
Moisture Sensitivity Level1 (Unlimited)