参数项参数值
参数项参数值
Forward Transconductance - Min100 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current230 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3.1 ns
Rds On - Drain-Source Resistance1.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9 ns
Width1.3 mm
Height1.1 mm
Length2.9 mm
Qg - Gate Charge1.4 nC
Package / CasePG-SOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeDepletion
Minimum Operating Temperature- 55 C
Fall Time9 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.001199 oz
RoHS Details
Pd - Power Dissipation360 mW
SeriesBSS159
Part # AliasesBSS159N H6327 SP000919328
ImageInfineon Technologies BSS159NH6327XTSA2
BrandInfineon Technologies
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time2.9 ns
DescriptionMOSFET N-Ch 60V 230mA SOT-23-3
Moisture Sensitivity Level1 (Unlimited)