参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Length2.2 mm
Width1.35 mm
Height1 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage1 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-323-3
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated MMST2222A-7-F
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT 40V 200mW
Product TypeBJTs - Bipolar Transistors
SeriesMMST22
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.000176 oz
USHTS8541210075
Pd - Power Dissipation200 mW
Moisture Sensitivity Level1 (Unlimited)