参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current22 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance39 mOhms
Mounting StyleSMD/SMT
Qg - Gate Charge15 nC
Package / CaseDPAK-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ImageON Semiconductor SVD5867NLT4G
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity2500
SeriesNVD5867N
SubcategoryMOSFETs
BrandON Semiconductor
Product CategoryMOSFET
Unit Weight0.020294 oz
DescriptionMOSFET NFET DPAK 60V 18A 43MOHM
ManufacturerON Semiconductor
Product TypeMOSFET
Pd - Power Dissipation43 W
Number of Channels1 Channel