参数项参数值
参数项参数值
DC Current Gain hFE Max75
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO100 V
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current6 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage1.5 V
DC Collector/Base Gain hfe Min15
MXHTS85412999
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandON Semiconductor
CNHTS8541290000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
SeriesMJD41C
TARIC8541290000
Product TypeBJTs - Bipolar Transistors
RoHS Details
Factory Pack Quantity2500
ImageON Semiconductor NJVMJD41CT4G
DescriptionBipolar Transistors - BJT BIP NPN 6A 100V TR
SubcategoryTransistors
Unit Weight0.011993 oz
USHTS8541290095
Part # AliasesNJVMJD41CT4G-VF01
Pd - Power Dissipation1.75 W