参数项参数值
参数项参数值
Forward Transconductance - Min24 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current23 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance44 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge35 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandON Semiconductor
CNHTS8541210000
ManufacturerON Semiconductor
Product CategoryMOSFET
TARIC8541210000
Product TypeMOSFET
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity2500
Fall Time71 ns
ImageON Semiconductor NTD6415ANLT4G
DescriptionMOSFET 100V HD3E NCH
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290095
Pd - Power Dissipation83 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time91 ns