参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current46 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance16 mOhms
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge29 nC
Package / CaseDPAK-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageON Semiconductor SVD5865NLT4G
PackagingCut Tape
PackagingReel
PackagingMouseReel
SubcategoryMOSFETs
Channel ModeEnhancement
BrandON Semiconductor
SeriesNVD5865N
Product TypeMOSFET
Factory Pack Quantity2500
ManufacturerON Semiconductor
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET NFET DPAK 60V 34A 18MOHM
Pd - Power Dissipation71 W
Number of Channels1 Channel