参数项参数值
参数项参数值
Forward Transconductance - Min75 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current50 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541290100
Typical Turn-On Delay Time9 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
RoHS Details
Package / CaseTO-252-3
Factory Pack Quantity2500
ImageVishay Semiconductors SUD50N04-8M8P-4GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 40V 50A 48.1W 8.8mohm @ 10V
Qg - Gate Charge37 nC
MXHTS85412999
Product TypeMOSFET
SeriesSUD
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.050717 oz
Fall Time5 ns
CNHTS8541290000
Pd - Power Dissipation48.1 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time5 ns