参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Rds On - Drain-Source Resistance340 mOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge22 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8542319000
ImageSTMicroelectronics STB15N65M5
Unit Weight0.139332 oz
SeriesMdmesh M5
Factory Pack Quantity1000
BrandSTMicroelectronics
Pd - Power Dissipation85 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 650V 0.308 Ohm 11A MDmesh M5
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290075
TradenameMDmesh
Number of Channels1 Channel