参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4 S
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Height9.15 mm
Length10.4 mm
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time16 ns
Product CategoryMOSFET
ImageSTMicroelectronics STP5NK60Z
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET N-Ch 600 Volt 5 Amp
Width4.6 mm
Mounting StyleThrough Hole
TARIC8541210000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge34 nC
Factory Pack Quantity1000
MXHTS85412101
RoHS Details
SeriesSTP5NK60Z
SubcategoryMOSFETs
USHTS8541290075
Channel ModeEnhancement
Fall Time25 ns
Unit Weight0.050717 oz
CNHTS8541210000
Pd - Power Dissipation90 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time25 ns
TypeMOSFET