IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

厂牌：英飞凌(INFINEON)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046518273

描述：Trans MOSFET N-CH 650V 4.2A 8-Pin Thin-PAK EP T/R

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current4.2 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 30 V, + 30 V

Typical Turn-On Delay Time6.6 ns

Rds On - Drain-Source Resistance1 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time41 ns

MXHTS85412999

Width5 mm

Height1.1 mm

Length6 mm

KRHTS8541299000

CNHTS8541290000

Qg - Gate Charge15 nC

Package / CaseThinPAK-56-8

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 40 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time13.6 ns

TARIC8541290000

PackagingReel

PackagingMouseReel

PackagingCut Tape

BrandInfineon Technologies

SeriesCoolMOS C6

RoHS Details

ImageInfineon Technologies IPL65R1K0C6SATMA1

Unit Weight0.002677 oz

Product CategoryMOSFET

SubcategoryMOSFETs

Factory Pack Quantity5000

ManufacturerInfineon

Product TypeMOSFET

Pd - Power Dissipation34.7 W

Part # AliasesIPL65R1K0C6S SP001163084

USHTS8541290095

DescriptionMOSFET N-Ch 650V 4.2A ThinPAK 5x6

Vds - Drain-Source Breakdown Voltage650 V

TradenameCoolMOS

Number of Channels1 Channel

Rise Time5.2 ns