BSM180D12P2C101

BSM180D12P2C101

厂牌：ROHM Semiconductor

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000046522983

描述：MOSFET 2N-CH 1200V 204A MODULE

下载数据手册

商品参数

参数项参数值

参数项参数值

PackagingBulk

Package / CaseModule

Configuration2 N-Channel (Half Bridge)

Operating Temperature-40°C ~ 150°C (TJ)

TechnologySilicon Carbide (SiC)

Power - Max1130W

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C204A (Tc)

Input Capacitance (Ciss) (Max) @ Vds23000pF @ 10V

Rds On (Max) @ Id, Vgs-

Gate Charge (Qg) (Max) @ Vgs-

FET Feature-

Vgs(th) (Max) @ Id4V @ 35.2mA

Supplier Device PackageModule

Moisture Sensitivity Level1 (Unlimited)