参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
Rds On - Drain-Source Resistance600 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge15 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time11 ns
PackagingTube
TARIC8541210000
ImageSTMicroelectronics STF8N65M5
Unit Weight0.011640 oz
SeriesMdmesh M5
Factory Pack Quantity1000
Pd - Power Dissipation25 W
BrandSTMicroelectronics
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 650V 0.56 Ohm 7A MDmesh M5 PWR MO
Vds - Drain-Source Breakdown Voltage650 V
USHTS8541290075
TradenameMDmesh
Number of Channels1 Channel
Rise Time14 ns
Moisture Sensitivity Level1 (Unlimited)