参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
ManufacturerToshiba
PackagingMouseReel
PackagingReel
PackagingCut Tape
Typical Turn-On Delay Time14 ns
Factory Pack Quantity2000
BrandToshiba
Minimum Operating Temperature- 55 C
Rds On - Drain-Source Resistance18.5 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 175 C
Typical Turn-Off Delay Time23 ns
Package / CaseDPAK-3
SubcategoryMOSFETs
TARIC8541290000
RoHS Details
Product TypeMOSFET
Mounting StyleSMD/SMT
ImageToshiba TK25S06N1L,LQ
Qg - Gate Charge15 nC
DescriptionMOSFET PWR MOS TRANS DPAK+
Product CategoryMOSFET
SeriesTK25S06N1L
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.012699 oz
Fall Time6 ns
Pd - Power Dissipation57 W
TradenameU-MOSVIII-H
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level1 (Unlimited)