参数项参数值
参数项参数值
Gain Bandwidth Product fT60 MHz
Collector- Base Voltage VCBO- 500 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max- 500 V
Continuous Collector Current- 0.15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 500 mV
Width1.4 mm
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
PackagingMouseReel
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
CNHTS8541210000
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT PNP High V 500V
ImageDiodes Incorporated FMMT560TA
Product TypeBJTs - Bipolar Transistors
SeriesFMMT560
ManufacturerDiodes Incorporated
TARIC8541210000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation500 mW
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)