参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage- 2.5 V
TechnologySi
Id - Continuous Drain Current46 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance17.3 mOhms
Typical Turn-Off Delay Time33 ns
Qg - Gate Charge52 nC
Package / CaseSO-8L-4
Mounting StyleSMD/SMT
Channel ModeEnhancement
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Fall Time6 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Pd - Power Dissipation68 W
ImageVishay Semiconductors SQJA81EP-T1_GE3
BrandVishay Semiconductors
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerVishay
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage80 V
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time5 ns
TradenamePowerPAK
USHTS8541290095
DescriptionMOSFET Automotive P-Channel 80 V (D-S) 175C MOSFET PowerPAK SO-8L 90M SG , 17.3 mO @ 10V mO @ 7.5V 26.5 mO @ 4.5V
Moisture Sensitivity Level1 (Unlimited)