参数项参数值
参数项参数值
Forward Transconductance - Min310 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current477 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time35.3 ns
Rds On - Drain-Source Resistance680 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time263 ns
Mounting StyleSMD/SMT
Qg - Gate Charge225 nC
Package / CasePQFN-88-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
PackagingCut Tape
PackagingReel
ImageON Semiconductor NTMTS0D7N06CLTXG
Channel ModeEnhancement
BrandON Semiconductor
Fall Time60.7 ns
Product TypeMOSFET
ManufacturerON Semiconductor
Factory Pack Quantity3000
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET AFSM T6 60V LL NCH
Pd - Power Dissipation294.6 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time26.3 ns
Moisture Sensitivity Level1 (Unlimited)