2N5416 TIN/LEAD

厂牌：Central Semiconductor Corp

包装：Box 1

类目：--

编号：B000046605166

描述：Bipolar Transistors - BJT PNP 350Vcbo 300Vceo 6.0Vebo 1.0W

商品参数

参数项参数值

PackagingBox

Package / CaseTO-205AD, TO-39-3 Metal Can

Mounting TypeThrough Hole

Transistor TypePNP

Operating Temperature-65°C ~ 200°C (TJ)

Vce Saturation (Max) @ Ib, Ic2V @ 5mA, 50mA

Current - Collector Cutoff (Max)50µA

DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V

Frequency - Transition15MHz

Supplier Device PackageTO-39

Grade-

Current - Collector (Ic) (Max)1 A

Voltage - Collector Emitter Breakdown (Max)300 V

Power - Max1 W

Qualification-