参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current197 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 40 V, + 40 V
Typical Turn-On Delay Time1.53 ns
Width1.8 mm
Rds On - Drain-Source Resistance14 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time17.5 ns
Height1.3 mm
Length3.1 mm
Qg - Gate Charge2.45 nC
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZVP4525
Channel ModeEnhancement
Product TypeMOSFET
DescriptionMOSFET P-Chnl 250V
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZVP4525E6TA
Product CategoryMOSFET
Fall Time3.78 ns
RoHS Details
Unit Weight0.000282 oz
SubcategoryMOSFETs
Pd - Power Dissipation1.1 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time3.78 ns
TypeFET
Moisture Sensitivity Level1 (Unlimited)