参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
Rds On (Max) @ Id, Vgs380mOhm @ 8.3A, 10V
FET Feature-
Power Dissipation (Max)205W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-3PN
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1945 pF @ 25 V
Qualification-
Moisture Sensitivity LevelNot Applicable