参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current209 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time23 ns
Rds On - Drain-Source Resistance4.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time130 ns
Width5.31 mm
Height20.7 mm
Length15.87 mm
Qg - Gate Charge410 nC
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time130 ns
PackagingTube
BrandInfineon / IR
RoHS Details
Product CategoryMOSFET
ImageInfineon / IR IRFP2907PBF
Unit Weight1.340411 oz
SubcategoryMOSFETs
Factory Pack Quantity400
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation330 W
DescriptionMOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC
Vds - Drain-Source Breakdown Voltage75 V
Number of Channels1 Channel
Rise Time190 ns
TypeAutomotive MOSFET