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FQPF9N50CF
厂牌：安森美(onsemi)
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046866188
描述：MOSFET N-CH 500V 9A TO220F
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min6.5 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance850 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time93 ns
Length10.36 mm
Height16.07 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge35 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingTube
BrandON Semiconductor / Fairchild
CNHTS8541290000
ManufacturerON Semiconductor
Product CategoryMOSFET
Factory Pack Quantity1000
Product TypeMOSFET
SeriesFQPF9N50CF
TARIC8541290000
Channel ModeEnhancement
RoHS Details
Fall Time64 ns
ImageON Semiconductor / Fairchild FQPF9N50CF
DescriptionMOSFET N-CH/500V/9A/ QFET C-Series
SubcategoryMOSFETs
Unit Weight0.080072 oz
USHTS8541290095
Pd - Power Dissipation44 W
TradenameQFET
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time65 ns
TypeMOSFET