参数项参数值
参数项参数值
DC Current Gain hFE Max600
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 500 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 700 mV
DC Collector/Base Gain hfe Min250
MXHTS85412101
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingCut Tape
PackagingReel
TARIC8541210000
RoHS Details
Pd - Power Dissipation250 mW
Part # Aliases934660117215
BrandNexperia
ImageNexperia BC807-40LR
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS BIPOLAR
Moisture Sensitivity Level1 (Unlimited)