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SQJ474EP-T1_GE3
厂牌：Vishay Dale
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046867293
描述：N-CH 100-V PPAK SO-8L
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min28 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current26 A
Transistor PolarityN-Channel
Height1.04 mm
Length6.15 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
ManufacturerVishay
KRHTS8541299000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Typical Turn-On Delay Time5 ns
Factory Pack Quantity3000
Minimum Operating Temperature- 55 C
BrandVishay Semiconductors
JPHTS8541290100
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 175 C
Typical Turn-Off Delay Time18 ns
Package / CasePowerPAK-SO-8-4
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541290000
RoHS Details
Product TypeMOSFET
Width5.13 mm
Mounting StyleSMD/SMT
ImageVishay Semiconductors SQJ474EP-T1_GE3
Qg - Gate Charge30 nC
DescriptionMOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
MXHTS85412999
Product CategoryMOSFET
SeriesSQ
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
Fall Time40 ns
CNHTS8541290000
Pd - Power Dissipation45 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)