参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage- 1 V, + 1 V
TechnologySi
Id - Continuous Drain Current4.7 A, - 3.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge16.7 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF7309TRPBF
TARIC8541290000
Unit Weight0.019048 oz
RoHS Details
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation1.4 W
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET MOSFT DUAL N/PCh 30V 4.0A
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)