CSD18512Q5BT

CSD18512Q5BT

厂牌：德州仪器(TI)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046868722

描述：MOSFET N-CH 40V 211A 8VSON

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min136 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.3 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current100 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time7 ns

MXHTS85412999

KRHTS8541299000

Rds On - Drain-Source Resistance1.8 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time31 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CNHTS8541210000

CAHTS8541290000

Package / CaseVSON-CLIP-8

Mounting StyleSMD/SMT

PackagingMouseReel

PackagingReel

PackagingCut Tape

Qg - Gate Charge98 nC

Maximum Operating Temperature+ 150 C

TARIC8541290000

BrandTexas Instruments

RoHS Details

ImageTexas Instruments CSD18512Q5BT

SubcategoryMOSFETs

Product CategoryMOSFET

ManufacturerTexas Instruments

Factory Pack Quantity250

SeriesCSD18512Q5B

Product TypeMOSFET

DescriptionMOSFET

Channel ModeEnhancement

Fall Time7 ns

USHTS8541290095

Unit Weight0.004081 oz

Pd - Power Dissipation139 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time16 ns

Moisture Sensitivity Level1 (Unlimited)