参数项参数值
参数项参数值
Forward Transconductance - Min136 S
CNHTS8541290000
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
MXHTS85412999
Rds On - Drain-Source Resistance1.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Package / CaseVSON-CLIP-8
KRHTS8541299000
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Qg - Gate Charge98 nC
TARIC8541290000
ManufacturerTexas Instruments
Factory Pack Quantity2500
BrandTexas Instruments
RoHS Details
SeriesCSD18512Q5B
Product TypeMOSFET
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET
Channel ModeEnhancement
USHTS8541290095
Fall Time7 ns
Unit Weight0.004081 oz
Pd - Power Dissipation139 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time16 ns
Moisture Sensitivity Level1 (Unlimited)