参数项参数值
参数项参数值
DC Current Gain hFE Max240
Collector- Base Voltage VCBO3 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
MXHTS85412101
Length7.8 mm
Width2.7 mm
Height10.8 mm
KRHTS8541299000
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min30
Minimum Operating Temperature- 65 C
JPHTS8541290100
Package / CaseSOT-32-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2000
PackagingTube
ImageSTMicroelectronics MJE340
Product CategoryBipolar Transistors - BJT
BrandSTMicroelectronics
RoHS Details
TARIC8541210000
Product TypeBJTs - Bipolar Transistors
SeriesMJE340
ManufacturerSTMicroelectronics
SubcategoryTransistors
Unit Weight0.002116 oz
USHTS8541290095
Pd - Power Dissipation20.8 W
Moisture Sensitivity Level1 (Unlimited)