参数项参数值
参数项参数值
Forward Transconductance - Min9 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time27 ns
Width1.4 mm
Height1.12 mm
Length2.9 mm
MXHTS85412101
Qg - Gate Charge10 nC
KRHTS8541219000
Package / CaseSSOT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541210000
CAHTS8541210000
Channel ModeEnhancement
Fall Time9 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.001058 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDN340P
Factory Pack Quantity3000
Pd - Power Dissipation500 mW
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET SSOT-3 P-CH -20V
TradenamePowerTrench
Number of Channels1 Channel
Rise Time9 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)