参数项参数值
参数项参数值
DC Current Gain hFE Max390 at - 100 mA, - 3 V
Gain Bandwidth Product fT340 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSC-96-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
BrandROHM Semiconductor
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
RoHS Details
DescriptionBipolar Transistors - BJT PNP Digital Transtr Driver
ImageROHM Semiconductor 2SAR554RTL
SubcategoryTransistors
USHTS8541290075
Part # Aliases2SAR554R
Pd - Power Dissipation1 W