参数项参数值
参数项参数值
Forward Transconductance - Min0.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage350 mV
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Rds On - Drain-Source Resistance750 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6.5 ns
MXHTS85412999
Qg - Gate Charge340 pC
KRHTS8541299000
Package / CaseVESM-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
CNHTS8541290000
Fall Time5.5 ns
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.000847 oz
ImageToshiba SSM3K35AMFV,L3F
SeriesSSM3K35AM
BrandToshiba
Pd - Power Dissipation500 mW
Factory Pack Quantity8000
Product TypeMOSFET
ManufacturerToshiba
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET LowON Res MOSFET ID=.25A VDSS=20V
Vds - Drain-Source Breakdown Voltage20 V
USHTS8541290095
TradenameU-MOSIII
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)