参数项参数值
参数项参数值
DC Current Gain hFE Max390 at - 100 mA, - 3 V
Gain Bandwidth Product fT340 MHz
Collector- Base Voltage VCBO- 80 V
Maximum DC Collector Current- 1.5 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor 2SAR554PT100
Series2SAR554P
BrandROHM Semiconductor
Pd - Power Dissipation2 W
Factory Pack Quantity1000
Part # Aliases2SAR554P
Product TypeBJTs - Bipolar Transistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 80V 1.5A 4PIN MPT
USHTS8541290095