NSV60600MZ4T3G

厂牌：安森美(onsemi)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046874157

描述：Trans GP BJT PNP 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R

商品参数

参数项参数值

DC Current Gain hFE Max360

Gain Bandwidth Product fT100 MHz

Collector- Base Voltage VCBO- 100 V

Maximum DC Collector Current- 12 A

Collector- Emitter Voltage VCEO Max- 60 V

Continuous Collector Current- 6 A

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO- 6 V

QualificationAEC-Q101

Collector-Emitter Saturation Voltage- 50 mV

DC Collector/Base Gain hfe Min120

MXHTS85412101

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-223-4

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541210000

TARIC8541210000

PackagingReel

PackagingMouseReel

ImageON Semiconductor NSV60600MZ4T3G

RoHS Details

PackagingCut Tape

SubcategoryTransistors

BrandON Semiconductor

ManufacturerON Semiconductor

SeriesNSS60600

Product CategoryBipolar Transistors - BJT

Factory Pack Quantity4000

Unit Weight0.003880 oz

USHTS8541290075

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT PNP LOW VCE(SAT)

Pd - Power Dissipation710 mW

Moisture Sensitivity Level1 (Unlimited)