参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current35 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time4 ns
Rds On - Drain-Source Resistance9.5 mOhms
Typical Turn-Off Delay Time96 ns
Minimum Operating Temperature- 55 C
Package / CasePowerDI3333-8
Mounting StyleSMD/SMT
Qg - Gate Charge33.7 nC
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
BrandDiodes Incorporated
Product CategoryMOSFET
Factory Pack Quantity3000
ImageDiodes Incorporated DMP3013SFV-13
TARIC8541290000
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS: 25V-30V
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time106.5 ns
Unit Weight0.001058 oz
USHTS8541290095
Pd - Power Dissipation31 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time4.5 ns