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DMN2990UFZ-7B
厂牌：美台(DIODES)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046876183
描述：场效应管(MOSFET) DMN2990UFZ-7B X2-DFN0606-3
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min180 ms
ConfigurationDual
TechnologySi
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityN-Channel
Id - Continuous Drain Current250 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541219000
Typical Turn-On Delay Time3.5 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8542390990
RoHS Details
CAHTS8541210000
Factory Pack Quantity10000
Rds On - Drain-Source Resistance990 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time22 ns
Package / CaseX2-DFN0606-3
BrandDiodes Incorporated
TARIC8542399000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMN2990UFZ-7B
PackagingMouseReel
PackagingReel
PackagingCut Tape
Product CategoryMOSFET
Qg - Gate Charge1 nC
SubcategoryMOSFETs
DescriptionMOSFET 20V N-Ch Enh FET Dual .25A .32W 389pF
MXHTS85423901
Product TypeMOSFET
SeriesDMN2990
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.352740 oz
Fall Time7.7 ns
CNHTS8541210000
Pd - Power Dissipation320 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time2.1 ns