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DMN2990UFA-7B
厂牌：美台(DIODES)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046876277
描述：场效应管(MOSFET) DMN2990UFA-7B XFDFN-3(0.6x0.8)
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min180 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current510 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
CNHTS8541210000
Typical Turn-On Delay Time4 ns
MXHTS85412101
Rds On - Drain-Source Resistance990 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
KRHTS8541219000
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
Package / CaseX2-DFN0806-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge500 pC
BrandDiodes Incorporated
TARIC8541210000
ManufacturerDiodes Incorporated
Factory Pack Quantity10000
ImageDiodes Incorporated DMN2990UFA-7B
RoHS Details
Product CategoryMOSFET
SeriesDMN2990
DescriptionMOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time6.4 ns
USHTS8541210095
Unit Weight0.352740 oz
Pd - Power Dissipation400 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time3.3 ns