参数项参数值
参数项参数值
Forward Transconductance - Min180 ms
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current450 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time4 ns
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
Rds On - Drain-Source Resistance990 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time19 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseSOT-963-6
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
Qg - Gate Charge500 pC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN2990UDJ-7
Factory Pack Quantity10000
SeriesDMN2990
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V-24V SOT963,10K
Channel ModeEnhancement
Fall Time6.4 ns
USHTS8541210095
Unit Weight9.523970 oz
Pd - Power Dissipation350 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time3.3 ns