参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current450 mA, - 310 mA
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
QualificationAEC-Q101
KRHTS8541299000
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance990 mOhms, 1.9 Ohms
Package / CaseSOT-963-6
Factory Pack Quantity10000
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
SubcategoryMOSFETs
Qg - Gate Charge0.5 nC, 0.4 nC
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V-24V
Product TypeMOSFET
MXHTS85412999
USHTS8541290095
Channel ModeEnhancement
Unit Weight9.523970 oz
CNHTS8541290000
Pd - Power Dissipation350 mW
Number of Channels2 Channel