参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current780 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
Rds On - Drain-Source Resistance900 mOhms
Package / CaseX1-DFN1006-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
Mounting StyleSMD/SMT
Qg - Gate Charge0.41 nC
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
SubcategoryMOSFETs
Factory Pack Quantity10000
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET
Channel ModeEnhancement
USHTS8541290095
Pd - Power Dissipation0.92 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel