MMBT5551M3T5G

厂牌：安森美(onsemi)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000046876587

描述：TRANS NPN 160V 60MA SOT-723

商品参数

参数项参数值

DC Current Gain hFE Max80 at 1 mA, 5 V

Collector- Base Voltage VCBO180 V

Maximum DC Collector Current0.06 A

Collector- Emitter Voltage VCEO Max160 V

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO6 V

MXHTS85423999

Length1.2 mm

Width0.8 mm

Height0.5 mm

KRHTS8541219000

DC Collector/Base Gain hfe Min80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V

Minimum Operating Temperature- 55 C

JPHTS8541210101

CAHTS8541210000

CNHTS8541210000

Package / CaseSOT-723-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Factory Pack Quantity8000

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageON Semiconductor MMBT5551M3T5G

BrandON Semiconductor

Product CategoryBipolar Transistors - BJT

TARIC8542399000

RoHS Details

DescriptionBipolar Transistors - BJT SOT-723 GP NPN TRANS

SeriesMMBT5551M3

Product TypeBJTs - Bipolar Transistors

ManufacturerON Semiconductor

SubcategoryTransistors

Unit Weight0.000045 oz

USHTS8541210095

Pd - Power Dissipation640 mW

Moisture Sensitivity Level1 (Unlimited)