SIRA62DP-T1-RE3

SIRA62DP-T1-RE3

厂牌：威世(VISHAY)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000046883739

描述：场效应管(MOSFET) SIRA62DP-T1-RE3 PowerPAK-SO-8

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min95 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current80 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 12 V, + 16 V

Typical Turn-On Delay Time12 ns

Rds On - Drain-Source Resistance1.2 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time26 ns

MXHTS85412999

Qg - Gate Charge61.5 nC

Package / CasePowerPAK-SO-8

Mounting StyleSMD/SMT

JPHTS8541290100

Channel ModeEnhancement

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Fall Time10 ns

CNHTS8541290000

PackagingReel

PackagingCut Tape

TARIC8541290000

Pd - Power Dissipation65.7 W

SeriesSIR

ImageVishay / Siliconix SIRA62DP-T1-RE3

BrandVishay / Siliconix

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

ManufacturerVishay

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Product CategoryMOSFET

Rise Time21 ns

TradenameTrenchFET, PowerPAK

USHTS8541290095

DescriptionMOSFET 30V Vds 16V Vgs PowerPAK SO-8