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IRFI510GPBF
厂牌：Vishay Semiconductors
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046889750
描述：MOSFET N-CH 100V 4.5A TO220FP
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.9 ns
Width4.7 mm
Rds On - Drain-Source Resistance540 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Height15.49 mm
Length10.41 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge8.3 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Factory Pack Quantity50
CNHTS8541290000
BrandVishay Semiconductors
SeriesIRFI
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerVishay
DescriptionMOSFET 100V N-CH HEXFET
ImageVishay Semiconductors IRFI510GPBF
Fall Time9.4 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation27 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time16 ns
Moisture Sensitivity Level1 (Unlimited)