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FDMC86160ET100
厂牌：ONSEMI
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000046890690
描述：MOSFET N-Channel Shielded Gate PowerTrench MOSFET 100V, 43A, 14mohm
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min43 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current43 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.7 ns
Rds On - Drain-Source Resistance21 mOhms
Typical Turn-Off Delay Time16 ns
Width3.3 mm
Height0.8 mm
Length3.3 mm
MXHTS85412999
Qg - Gate Charge15 nC
KRHTS8541299000
Package / CasePower-33-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Channel ModeEnhancement
Fall Time3.4 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.005386 oz
BrandON Semiconductor / Fairchild
SeriesFDMC86160ET100
ImageON Semiconductor / Fairchild FDMC86160ET100
Pd - Power Dissipation54 W
ManufacturerON Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET 100V N-Channel Power Trench MOSFET
TradenamePowerTrench Power Clip
Number of Channels1 Channel
Rise Time3.6 ns