参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9.1 A
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time2.8 ns
MXHTS85412101
CNHTS8541210000
KRHTS8541219000
Rds On - Drain-Source Resistance15 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10.6 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Package / CaseDFN-2020-6
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingCut Tape
PackagingReel
Qg - Gate Charge14 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMT5015LFDF-7
Factory Pack Quantity3000
SeriesDMT50
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
Channel ModeEnhancement
USHTS8541210095
Unit Weight0.740753 oz
Pd - Power Dissipation1.97 W
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Rise Time5.1 ns