参数项参数值
参数项参数值
Forward Transconductance - Min90 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance6.7 mOhms
Transistor Type1 P-Channel
Width9.65 mm
Typical Turn-Off Delay Time97 ns
Length10.67 mm
Height4.83 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge180 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
CNHTS8541290000
BrandVishay / Siliconix
ManufacturerVishay
Product TypeMOSFET
SeriesSQ
TARIC8541290000
Product CategoryMOSFET
Factory Pack Quantity800
Channel ModeEnhancement
RoHS Details
Fall Time32 ns
DescriptionMOSFET 60 V 120A 375 W AEC-Q101 Qualified
ImageVishay / Siliconix SQM120P06-07L_GE3
SubcategoryMOSFETs
Unit Weight0.077603 oz
USHTS8541290095
Pd - Power Dissipation375 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time23 ns